High Voltage Power IC（>400V） - MOS driver , DC power chip , Half-bridge integrated drive

High Voltage Power IC（>400V） High Voltage Power IC（>400V） High Voltage Synchronous Power IC（>400V） High Voltage Synchronous Power IC（<400V） Middle Voltage Power IC（≤200V） Middle Voltage Power IC（≤200V） Low Voltage Synchronous Buck Power IC（<60V） Low Voltage Synchronous Boost Power IC（<60V）

Model No. 产品型号	Character 主要特点	V_IN _max(V) 输入电压范围	Power MOSFET 功率管	Vout(V) 输出电压范围	Output Power(W) 典型输出	VFB(V) 反馈电压基准	Switching Freq(Typ) 典型工作效率	GND 地线特性	5VLDO 内置LDO	EN 使能	Topology 拓扑结构	Package 封装形式
U322B	CV Mode/ DC-DCBuckConverter,External MOS 集成高压启动的多模式PWM 降压/隔离反击电源IC，外置 MOS	20~650	External 外置	12.5&ADJ	5V10A.12V15A	1.87V	80kHz	PGND&SGND 悬浮地	—	N	Buck/Flyback 降压/隔离反击	SOP8
U322C	CV Mode/ DC-DCBuckConverter,External MOS集成高压启动的多模式PWM 降压/隔离反击电源IC，外置 MOS	10~650	External 外置	12.5&ADJ	5V10A.12V15A	1.87V	100kHz	PGND&SGND 悬浮地	—	Y	Buck/Flyback 降压/隔离反击	SOP8

Model No.

产品型号

Character

主要特点

V_IN _max(V)

输入电压范围

Power MOSFET

功率管

Vout(V)

输出电压范围

Output Power(W)

典型输出

VFB(V)

反馈电压基准

Switching Freq(Typ)

典型工作效率

GND

地线特性

5VLDO

内置LDO

使能

Topology

拓扑结构

Package

封装形式

U322B

CV Mode/ DC-DCBuckConverter,External MOS

集成高压启动的多模式PWM 降压/隔离反击电源IC，外置 MOS

20~650

External
外置

12.5&ADJ

5V10A.12V15A

1.87V

80kHz

PGND&SGND

悬浮地

—

Buck/Flyback

降压/隔离反击

SOP8

U322C

CV Mode/ DC-DCBuckConverter,External MOS集成高压启动的多模式PWM 降压/隔离反击电源IC，外置 MOS

10~650

External
外置

12.5&ADJ

5V10A.12V15A

1.87V

100kHz

PGND&SGND

悬浮地

—

Buck/Flyback

降压/隔离反击

SOP8

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